Infineon BSC190N15NS3: A High-Performance 150V OptiMOS™ Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's BSC190N15NS3, a 150V N-channel OptiMOS™ power MOSFET engineered to set a new benchmark in performance for a wide array of switching applications.

This MOSFET is built upon Infineon's advanced super-junction technology, which is the cornerstone of its exceptional characteristics. The primary standout feature is its extremely low figure-of-merit (R DS(on) Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 19 mΩ and an exceptionally low gate charge (Q G), the device achieves an optimal balance between conduction and switching losses. This synergy is critical for applications where both high current handling and fast switching frequencies are required, as it leads to significantly reduced power dissipation and higher overall system efficiency.

The benefits of these technical advantages are realized across numerous demanding fields. The BSC190N15NS3 is an ideal candidate for:

Switch-Mode Power Supplies (SMPS): Its low losses contribute to higher efficiency in AC-DC and DC-DC converters, particularly in servers, telecom infrastructure, and industrial power systems.

Motor Control and Drives: The robust 150V rating and high efficiency make it perfect for driving motors in industrial automation, robotics, and automotive applications.

Solar Inverters: Optimizing energy harvest in photovoltaic systems requires highly efficient conversion, a task for which this MOSFET is well-suited.

Synchronous Rectification: The low R DS(on) is paramount for minimizing voltage drops and heat generation in secondary-side rectification stages.

Furthermore, the device is housed in a SuperSO8 package, which offers a compact footprint while providing superior thermal performance compared to standard SO-8 packages. This allows designers to achieve higher power output without compromising board space or thermal management budgets. The AEC-Q101 qualification also opens doors for its use in automotive environments, ensuring reliability under stringent operating conditions.

ICGOOODFIND: The Infineon BSC190N15NS3 OptiMOS™ MOSFET stands out as a superior component for designers aiming to push the limits of efficiency and power density. Its industry-leading low on-resistance and gate charge directly translate into cooler operation, higher switching speeds, and more energy-efficient end products, making it a compelling choice for the next generation of power conversion systems.

Keywords: Low R DS(on), High Efficiency, OptiMOS™ Technology, Fast Switching, SuperSO8 Package.