Infineon IRF8910TRPBF: A High-Performance 30V Dual N-Channel MOSFET in a Compact PG-TSDSON-10 Package

Modern power electronics demand components that deliver high efficiency, robust performance, and minimal space consumption. Addressing these needs, the Infineon IRF8910TRPBF stands out as a premier dual N-channel MOSFET optimized for a wide range of applications, from power management in computing to load switching in automotive systems. This device integrates two advanced MOSFETs in an extremely small PG-TSDSON-10 package, offering designers a powerful solution for space-constrained designs without compromising on electrical performance.

A key highlight of the IRF8910TRPBF is its low on-state resistance (R DS(on)) of just 3.8 mΩ (max) per channel at V GS = 10 V. This exceptionally low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and improved thermal management. Whether used in synchronous rectification, motor control, or DC-DC converters, this characteristic ensures more power is delivered to the load and less is wasted as heat.

The MOSFET is rated for a drain-source voltage (V DS) of 30V, making it perfectly suited for low-voltage applications such as secondary power switching in server and telecom systems, battery management, and OR-ing circuits. The dual N-channel configuration provides design flexibility, allowing engineers to use the two transistors in complementary switching topologies like half-bridges or as independent switches, all within a single, unified package.

Housed in the ultra-compact PG-TSDSON-10 package, the IRF8910TRPBF exemplifies the industry trend toward miniaturization. This package features a very small footprint and a low profile, which is essential for modern high-density PCB designs. Despite its small size, the package is engineered for effective thermal performance, with an exposed pad that enhances heat dissipation by allowing efficient transfer to the PCB.

Furthermore, the device is characterized by low gate charge (Q G) and fast switching capabilities, which are paramount for high-frequency operation. These properties help in reducing switching losses, enabling higher operating frequencies in switch-mode power supplies (SMPS), which in turn allows for the use of smaller passive components like inductors and capacitors.

ICGOOODFIND: The Infineon IRF8910TRPBF is a superior dual N-channel MOSFET that masterfully combines high efficiency, proven by its very low R DS(on), with the space-saving advantages of the PG-TSDSON-10 package. Its excellent electrical characteristics and robust 30V rating make it an ideal choice for power designers aiming to enhance performance and density in a broad spectrum of advanced electronic systems.

Keywords: Low RDS(on), Dual N-Channel, PG-TSDSON-10, 30V MOSFET, Power Management