Infineon IPB031N08N5ATMA1 OptiMOS 5 Power MOSFET: Key Features and Application Benefits
The Infineon IPB031N08N5ATMA1 represents a significant advancement in power semiconductor technology, belonging to the OptiMOS™ 5 80 V power MOSFET family. Engineered for exceptional performance in a compact D²PAK (TO-263) package, this device is designed to meet the escalating demands for higher efficiency and power density across a wide range of industrial and automotive applications.
A cornerstone feature of this MOSFET is its extremely low typical on-state resistance (R DS(on)) of just 1.3 mΩ. This ultra-low resistance is paramount in minimizing conduction losses, which directly translates to reduced heat generation and higher overall system efficiency. By operating cooler, systems can achieve greater reliability or handle higher loads without the need for excessive cooling solutions, thereby saving space and cost.
Complementing its low R DS(on) is the device's superior switching performance. The OptiMOS™ 5 technology ensures very low gate charge (Q G ) and figure of merit (FOM), enabling faster switching frequencies. This is critical for applications like switch-mode power supplies (SMPS) and DC-DC converters, where higher switching speeds allow for the use of smaller passive components such as inductors and capacitors. The result is a substantial increase in power density, enabling designers to create more compact and lighter end-products without sacrificing performance.
The robustness of the IPB031N08N5ATMA1 is further enhanced by its optimized body diode, which provides excellent reverse recovery characteristics. This hard-switching robustness makes it exceptionally reliable in challenging environments, including automotive systems like electric power steering (EPS), braking systems, and 48V boardnet supplies, where operational stability is non-negotiable.
Furthermore, its AEC-Q101 qualification guarantees that it meets the stringent quality and reliability standards required for automotive applications, ensuring long-term durability under harsh operating conditions. This makes it a versatile solution not only for automotive but also for industrial motor drives, solar inverters, and battery management systems.
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ICGOODFIND Summary: The Infineon IPB031N08N5ATMA1 OptiMOS™ 5 MOSFET sets a new benchmark for power switching with its industry-leading low R DS(on) and exceptional switching characteristics. It is a pivotal component for engineers aiming to push the boundaries of efficiency and power density in modern automotive and industrial designs, ultimately leading to smaller, cooler, and more reliable systems.
Keywords: Low R DS(on) , High Efficiency, OptiMOS™ 5, Power Density, AEC-Q101 Qualified.
