Infineon BSZ15DC02KDHXTMA1: 40 V Dual N-Channel MOSFET in a Compact PG-TSDSON-8 Package

Power density and efficiency are paramount in modern electronic design, pushing components to do more in less space. Addressing this need, the Infineon BSZ15DC02KDHXTMA1 stands out as a highly integrated solution, incorporating two independent N-channel MOSFETs in an extremely small PG-TSDSON-8 package (2.3 x 2 mm²). This device is engineered for space-constrained applications requiring robust performance and high efficiency.

Built on Infineon's advanced OptiMOS™ technology, this dual MOSFET offers a low typical on-state resistance (RDS(on)) of just 15 mΩ per channel at 10 V. This exceptionally low RDS(on) is a key performance metric, as it directly translates to minimal conduction losses and higher overall system efficiency. The 40 V drain-source voltage (VDS) rating makes it suitable for a wide range of low-voltage applications, including load switching, power management in portable devices, battery protection circuits, and motor drive control in consumer and industrial electronics.

The PG-TSDSON-8 package is a significant advantage. Its ultra-compact footprint allows designers to save valuable PCB real estate, which is critical for ever-shrinking end products. Despite its small size, the package is designed for effective thermal management, capable of dissipating heat efficiently during operation.

Furthermore, the device is characterized by its low gate charge (Qg), which enables fast switching speeds. This reduces switching losses, a crucial factor in high-frequency circuits such as DC-DC converters, leading to cooler operation and even greater efficiency.

ICGOOODFIND: The Infineon BSZ15DC02KDHXTMA1 is an optimal choice for designers prioritizing miniaturization and power efficiency. Its dual-chip integration in a minuscule package, combined with superior RDS(on) and switching performance, provides a compact, high-performance switching solution that meets the demands of next-generation portable and battery-powered electronics.

Keywords: Dual N-Channel MOSFET, OptiMOS™, Low RDS(on), PG-TSDSON-8, Power Management.