Infineon IPZ40N04S5L-2R8: 40V OptiMOS 5 Power MOSFET with 8mΩ RDS(on)

Release date:2025-10-31 Number of clicks:78

Infineon IPZ40N04S5L-2R8: 40V OptiMOS 5 Power MOSFET with 8mΩ RDS(on)

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge head-on, the Infineon IPZ40N04S5L-2R8 stands out as a premier 40V N-channel Power MOSFET engineered with Infineon's advanced OptiMOS™ 5 technology. This device is specifically designed to minimize power losses and maximize performance in a compact form factor, making it an ideal solution for a wide array of demanding applications.

At the heart of this MOSFET's superior performance is its exceptionally low on-state resistance (RDS(on)) of just 8mΩ (max. at VGS = 10 V). This ultra-low resistance is a key figure of merit, as it directly translates to reduced conduction losses. When the MOSFET is switched on, less energy is wasted as heat, leading to significantly higher efficiency. This characteristic is paramount in high-current applications such as motor control for robotics and industrial drives, where every watt saved improves system reliability and thermal management.

Beyond its stellar DC performance, the OptiMOS™ 5 technology also ensures excellent switching behavior. The device features low gate charge (QG) and low figures of merit (e.g., RDS(on) x QG), which allow for faster switching speeds and lower switching losses. This is critical for high-frequency switch-mode power supplies (SMPS), DC-DC converters, and synchronous rectification circuits, enabling designers to push the boundaries of frequency and shrink the size of magnetic components.

Housed in a robust Infineon S5L (SuperSO8) package, the IPZ40N04S5L-2R8 offers an optimal balance between high power handling and a small PCB footprint. The package's superior thermal characteristics ensure that heat is effectively dissipated, allowing the MOSFET to operate reliably even under strenuous conditions. Furthermore, its AEC-Q101 qualification makes it a dependable choice for automotive applications, including electric power steering (EPS), braking systems, and other 12V boardnet solutions.

In summary, the Infineon IPZ40N04S5L-2R8 embodies the cutting edge of power semiconductor technology, delivering a potent combination of ultra-low losses, robust switching performance, and high reliability.

ICGOODFIND: This component is a top-tier choice for designers optimizing for peak efficiency and power density in industrial, automotive, and computing applications.

Keywords: OptiMOS™ 5, Low RDS(on), High Efficiency, Power MOSFET, S5L Package.

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